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document number: 93176 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 08-apr-08 1 fast recovery diodes (stud version), 400/450 a sd453n/r series vishay high power products features ? high power fast recovery diode series ? 2.0 to 3.0 s recovery time ? high voltage ratings up to 2500 v ? high current capability ? optimized turn-on and turn-off characteristics ? low forward recovery ? fast and soft reverse recovery ? compression bonded encapsulation ? stud version case style b-8 ? maximum junction temperature 150 c ?rohs complaint ? lead (pb)-free ? designed and qualified for industrial level typical applications ? snubber diode for gto ? high voltage freewheeling diode ? fast recovery rectifier applications electrical specifications product summary i f(av) 400/450 a b-8 rohs compliant major ratings and characteristics parameter test conditions sd453n/r units s20 s30 i f(av) 400 450 a t c 70 c i f(rms) 630 710 a i fsm 50 hz 9300 9600 60 hz 9730 10 050 v rrm range 1200 to 2500 v t rr 2.0 3.0 s t j 25 c t j - 40 to 150 voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j = t j maximum ma sd453n/r 12 1200 1300 50 16 1600 1700 20 2000 2100 25 2500 2600
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93176 2 revision: 08-apr-08 sd453n/r series vishay high power products fast recovery diodes (stud version), 400/450 a forward conduction parameter symbol test conditions sd453n/r units s20 s30 maximum average forward current at case temperature i f(av) 180 conduction, half sine wave 400 450 a 70 c maximum rms forward current at case temperature i f(rms) 630 710 a 55 52 c maximum peak, one-cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 9300 9600 a t = 8.3 ms 9730 10 050 t = 10 ms 100 % v rrm reapplied 7820 8070 t = 8.3 ms 8190 8450 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 432 460 ka 2 s t = 8.3 ms 395 420 t = 10 ms 100 % v rrm reapplied 306 326 t = 8.3 ms 279 297 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 4320 4600 ka 2 s low level value of threshold voltage v f(to)1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 1.00 0.95 v high level value of threshold voltage v f(to)2 (i > x i f(av) ), t j = t j maximum 1.09 1.04 low level value of forward slope resistance r f1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 0.80 0.60 m high level value of forward slope resistance r f2 (i > x i f(av) ), t j = t j maximum 0.74 0.54 maximum forward voltage drop v fm i pk = 1500 a, t j = t j maximum, t p = 10 ms sinusoidal wave 2.20 1.85 v recovery characteristics code maximum value at t j = 25 c test conditions typical values at t j = 150 c t rr at 25 % i rrm (s) i pk square pulse (a) di/dt (a/s) v r (v) t rr at 25 % i rrm (s) q rr (c) i rr (a) s20 2.0 1000 50 - 50 3.5 250 120 s30 3.0 5.0 380 150 thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 0.1 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.04 mounting torque 10 % not-lubricated threads 50 nm approximate weight 454 g case style see dimensions (lin k at the end of datasheet) b-8 i fm t rr dir dt i rm(rec) q rr t
document number: 93176 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 08-apr-08 3 sd453n/r series fast recovery diodes (stud version), 400/450 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at di fferent conduction angles than dc fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics r thjc conduction conduction angle sinusoidal conduction recta ngular conduction test conditions units 180 0.010 0.008 t j = t j maximum k/w 120 0.014 0.014 90 0.017 0.019 60 0.025 0.026 30 0.042 0.042 60 70 80 90 100 110 120 130 140 150 0 50 100 150 200 250 300 350 400 450 30 60 90 120 180 average forward current (a) conduction angle maximum allowable case temperature (c) sd 4 5 3 n / r. . s2 0 se r i e s r (dc) = 0.1 k/ w thjc 50 60 70 80 90 100 110 120 130 140 150 0 100 200 300 400 500 600 700 30 60 90 180 dc 120 average forward current (a) conduction period maximum allowable case temperature (c) sd 4 5 3 n / r. . s2 0 se r i e s r (dc) = 0.1 k/ w thjc 60 70 80 90 100 110 120 130 140 150 0100200300400500 30 60 90 120 180 average forward current (a) conduction angle maximum allowable case temperature (c) sd 4 5 3 n / r. . s3 0 se r i e s r (dc) = 0.1 k/ w thjc 40 50 60 70 80 90 100 110 120 130 140 150 0 200 400 600 800 30 60 90 180 dc 120 average forward current (a) conduction period maximum allowable case temperature (c) sd 4 5 3 n / r. . s3 0 se r i e s r (dc) = 0.1 k/ w thjc
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93176 4 revision: 08-apr-08 sd453n/r series vishay high power products fast recovery diodes (stud version), 400/450 a fig. 5 - forward power loss characteristics fig. 6 - forward power loss characteristics fig. 7 - forward power loss characteristics fig. 8 - forward power loss characteristics fig. 9 - maximum non-repetitive surge current fig. 10 - maximum non-repetitive surge current 0 100 200 300 400 500 600 700 800 0 50 100 150 200 250 300 350 400 450 180 120 90 60 30 average forward current (a) maximum average forward power loss (w) rm s li m i t conduction angle sd 4 5 3 n / r. . s2 0 se r i e s t = 150c j 0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 dc 180 120 90 60 30 average forward current (a) rm s li m i t maximum average forward power loss (w) conduction period sd 4 5 3 n / r. . s2 0 se r i e s t = 150c j 0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 180 120 90 60 30 averag e forw ard current (a) maximum average forward power loss (w) rm s li m i t conduction angle sd 4 5 3 n / r. . s3 0 se r i e s t = 1 5 0 c j 0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 dc 180 120 90 60 30 average forward current (a) rm s lim i t maximum average forward power loss (w) conduction period sd 4 5 3 n / r. . s3 0 se r i e s t = 1 5 0 c j 2000 3000 4000 5000 6000 7000 8000 9000 110100 number of equal amplitude half cycle current pulses (n) pea k ha lf sine wa ve forwa rd current (a) sd453n/ r..s20 se rie s init ia l t = 150 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with rated v applied following surge. rrm 2000 3000 4000 5000 6000 7000 8000 9000 10000 0.01 0.1 1 pu lse tra in d ura t io n ( s) peak half sine wave forward current (a) maximum non repetitive surge current sd453n/ r..s20 se rie s versus pulse train dura tion. initia l t = 150 c no voltage reapplied rated v reapplied rrm j
document number: 93176 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 08-apr-08 5 sd453n/r series fast recovery diodes (stud version), 400/450 a vishay high power products fig. 11 - maximum non-repetitive surge current fig. 12 - maximum non-repetitive surge current fig. 13 - forward voltage drop characteristics fig. 14 - forward voltage drop characteristics fig. 15 - thermal impedance z thjc characteristic 2000 3000 4000 5000 6000 7000 8000 9000 110100 number of eq ual amplitud e half cycle current pulses (n) pe a k ha lf s ine wave forward current (a) init ia l t = 150 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j sd 4 5 3 n / r. . s3 0 se r i e s at any ra ted load cond ition and with rated v applied following surge. rrm 2000 3000 4000 5000 6000 7000 8000 9000 10000 0.01 0.1 1 pulse train duration (s) pea k ha lf s ine wave forward current (a) maximum non repetitive surge current sd453n/ r..s30 serie s versus pulse train duration. in it ia l t = 150 c no volta g e rea pp lied rated v reapplied rrm j 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 t = 2 5 c j instantaneous forward voltage (v) instantaneous forward current (a) t = 150c j sd453n/ r..s20 se rie s 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 4 t = 2 5 c j instantaneous forward voltage (v) instantaneous forward current (a) t = 150c j sd453n/ r..s30 series 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 sq u a r e w a v e p u l se d u r a t i o n ( s) thjc transient thermal impedance z (k/w) steady state value: r = 0.1 k/ w (dc operation) thjc sd453n/ r..s20/ s30 se rie s
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93176 6 revision: 08-apr-08 sd453n/r series vishay high power products fast recovery diodes (stud version), 400/450 a fig. 16 - typical forward recovery characteristics fig. 17 - typical forward recovery characteristics fig. 18 - recovery time characteristics fig. 19 - recovery charge characteristics fig. 20 - recovery current characteristics fig. 21 - recovery time characteristics 0 20 40 60 80 100 0 400 800 1200 1600 2000 t = 2 5 c j fo rw a rd re c ove ry (v) t = 150c j sd 4 5 3 n / r. . s2 0 se r i e s rate of rise of forward current - di/dt (a/us) i v fp 0 20 40 60 80 100 0 400 800 120016002000 t = 2 5 c j forwa rd rec overy (v) t = 1 5 0 c j sd 4 5 3 n / r. . s3 0 se r i e s rate of rise of forward current - di/dt (a/us) i v fp 2 2.5 3 3.5 4 4.5 5 5.5 6 10 100 1000 rate of fall of forward current - di/dt (a/s) maximum reverse rec overy time - trr (s) 500 a 150 a i = 1000 a si n e p u l s e fm sd 4 5 3 n / r. . s2 0 se r i e s t = 150 c; v > 100v j r 0 100 200 300 400 500 600 700 800 0 50 100 150 200 250 300 maximum reverse recovery charge - qrr (c) rate of fall of forward current - di/dt (a/s) 500 a 150 a i = 1000 a si n e pu l s e fm sd 4 5 3 n / r. . s2 0 se r i e s t = 150 c; v > 100v j r 0 50 100 150 200 250 300 350 400 450 0 50 100 150 200 250 300 maximum reverse recovery current - irr (a) 500 a rate of fall of forward current - di/dt (a/s) 150 a i = 1000 a s ine pulse fm sd 4 5 3 n / r. . s2 0 se r i e s t = 150 c; v > 100v j r 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 10 100 1000 rate of fall of forward current - di/dt (a/s) maximum reverse recovery time - trr (s) 500 a 150 a i = 1000 a si n e p u l s e fm sd453n/ r..s30 series t = 150 c, v > 100v j r
document number: 93176 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 08-apr-08 7 sd453n/r series fast recovery diodes (stud version), 400/450 a vishay high power products fig. 22 - recovery c harge characteristics fig. 23 - recovery current characteristics fig. 24 - maximum total energy loss per pulse characteristics fig. 25 - frequency characteristics fig. 26 - maximum total energy loss per pulse characteristics fig. 27 - frequency characteristics 0 200 400 600 800 1000 1200 0 50 100 150 200 250 300 maximum reverse rec overy charge - qrr (c) rate of fall of forward current - di/dt (a/s) 500 a 150 a i = 1000 a si n e p u l se fm sd453n/ r..s30 serie s t = 150 c; v > 100v r j 0 50 100 150 200 250 300 350 400 450 500 550 0 50 100 150 200 250 300 ma xim um reverse re c o very curre nt - irr ( a) 500 a rate of fall of forward current - di/dt (a/s) 150 a i = 1000 a si n e pu l se fm sd 4 5 3 n / r. . s3 0 se r i e s t = 150 c; v > 100v j r 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 2 pu lse ba se w i d t h ( s) peak forwa rd current (a) 10 joules p er p ulse 6 4 d v/ d t = 1000v/ s sinusoidal pulse 0.6 0.4 0.2 0.1 sd 4 5 3 n / r. . s2 0 se r i e s t = 150c, v = 800v j rrm tp 1e2 1e3 1e4 1 e1 1 e2 1 e3 1 e4 pu lse ba se w id t h ( s) 50 hz 200 10000 100 4000 dv/dt = 1000v/us 400 1000 2000 6000 peak forward current (a) si n u s o i d a l p u l se 1500 3000 t = 70c, v = 800v c rrm sd 4 5 3 n / r. . s2 0 se r i e s tp 600 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 2 pu lse ba se w id t h ( s) 4 10 joules per pulse 6 trapezoidal pulse peak forwa rd current (a) 0.8 0.6 sd 4 5 3 n / r. . s2 0 se r i e s t = 150c, v = 800v j rrm d v/ d t = 1000v/ s; d i/ d t = 300a/ s tp 0.4 1e2 1e3 1e4 1e1 1e2 1e3 1e4 pu lse ba se w id t h ( s) tr a p e zo i d a l pu l se 50 hz 100 200 400 1000 1500 2000 4000 3000 600 6000 pe a k fo rw a r d c u rr e n t ( a ) sd 4 5 3 n / r. . s2 0 se r i e s t = 70c, v = 800v dv/dt = 1000v/us, d i/ d t = 300a/ us rrm c tp
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93176 8 revision: 08-apr-08 sd453n/r series vishay high power products fast recovery diodes (stud version), 400/450 a fig. 28 - maximum total energy loss per pulse characteristics fig. 29 - frequency characteristics fig. 30 - maximum total energy loss per pulse characteristics fig. 31 - frequency characteristics fig. 32 - maximum total energy loss per pulse characteristics fig. 33 - frequency characteristics 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 2 pu lse ba se w id t h ( s) 4 10 joules per pulse 6 trapezoidal pulse peak forward current (a) 0.6 0.4 sd 4 5 3 n / r. . s2 0 se r i e s dv/dt = 1000v/s d i/ d t = 100a/ s t = 1 5 0 c , v = 8 0 0 v j rrm tp 0.2 1e2 1e3 1e4 1e1 1e2 1e3 1e4 pu l se ba se w i d t h ( s) tr a p e z o i d a l p u l s e 50 hz 100 200 400 1000 1500 2000 4000 3000 600 6000 pe a k fo rw a rd current (a) t = 70c, v = 800v dv/dt = 1000v/us, d i/ d t = 100a/ us rrm c sd453n/ r..s20 serie s tp 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 2 pu lse ba se w id t h ( s) pe a k fo r w a r d c u rre n t ( a ) 10 jo ules p er p ulse 6 4 dv/dt = 1000v/s sinusoidal pulse 0.8 0.6 0.4 0.2 sd453n/ r...s30 series t = 150c, v = 800v j rrm tp 0.1 1e2 1e3 1e4 1 e1 1 e2 1 e3 1 e4 pu lse ba se w id t h ( s) 50 hz 200 100 4000 dv/dt = 1000v/us 400 1000 2000 6000 pe a k fo rw a r d c u rre n t ( a ) si n u so i d a l pu l se 1500 3000 sd 4 5 3 n / r. . s3 0 se r i e s 6000 t = 70c, v = 800v rrm c tp 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 2 pu lse ba se w id t h ( s) 4 10 joules per pulse 6 trapezoidal pulse peak forwa rd current (a) 0.8 sd453n/ r..s30 series t = 150c, v = 800v j rrm 0.6 d v/ d t = 1000v/ s; d i/ d t = 300a/ s tp 1e2 1e3 1e4 1 e1 1 e2 1 e3 1 e4 pu lse ba se w id t h ( s) tr a p e z o i d a l p u l se 50 hz 100 200 400 1000 2000 4000 3000 600 pe a k fo rwa rd curre nt ( a) dv/dt = 1000v/us, di/dt = 300a/us t = 70c, v = 800v sd 4 5 3 n / r. . s3 0 se r i e s rrm tp
document number: 93176 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 08-apr-08 9 sd453n/r series fast recovery diodes (stud version), 400/450 a vishay high power products fig. 34 - maximum total energy loss per pulse characteristics fig. 35 - frequency characteristics ordering information table 1e2 1e3 1e4 1e11e21e31e4 1 2 pu lse ba se w id t h ( s) 4 10 joules per pulse 6 t rapezoidal pulse peak forward current (a) sd 4 5 3 n / r. . s3 0 se r i e s t = 1 5 0 c , v = 8 0 0 v j rrm 0.8 0.6 d v/ d t = 1000v/ s; d i/ d t = 100a/ s tp 0.4 1e2 1e3 1e4 1e1 1e2 1e3 1e4 pulse ba se w id t h ( s) tr a p e zo i d a l pu l se 50 hz 100 200 400 1000 1500 2000 4000 3000 600 peak forward current (a) sd 4 5 3 n / r. . s3 0 s eries t = 70c, v = 800v dv/dt = 1000v/us, d i/ d t = 100a/ us c rrm tp device code 5 1 3 24 6789 sd 45 3 n 25 s30 p s c 1 - diode 2 - essential part number 3 - 3 = fast recovery 4 - n = stud normal polarity (cathode to stud) r = stud reverse polarity (anode to stud) 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 -t rr code (see recovery characteristics table) 7 - p = stud base b-8 3/4" 16unf-2a m = stud base b-8 m24 x 1.5 8 - 7 s = isolated lead with silicon sleeve (red = reverse polarity; blue = normal polarity) none = not isolated lead t = threaded top terminal 3/8" 24unf-2a 9 - c = ceramic housing links to related documents dimensions http://www.vishay.com/doc?95303
document number: 95303 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 11-apr-08 1 b-8 outline dimensions vishay semiconductors dimensions in millimeters (inches) 26 (1.023) max. 10.5 (0.41) dia. 5 (0.20) 0.3 (0.01) 12 (0.47) min. 27.5 (1.08) max. 38 (1.5) dia. max. ceramic housing sw 45 c.s. 70 mm 2 21 (0.83) max. 3/4"-16unf-2a * 115 (4.52) min. 245 (9.645) 255 (10.04) 80 (3.15) max. 47 (1.85) max. *for metric device: m24 x 1.5 - length 21 (0.83) max. contact factory
legal disclaimer notice www.vishay.com vishay revision: 12-mar-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products no t expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale , including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding th e design or manufacture of the part. please contact authorized vishay personnel t o obtain written terms and conditions regardin g products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu.

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